? 2014 ixys corporation, all rights reserved IXXH60N65C4 v ces = 650v i c110 = 60a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 2.4v t fi(typ) = 30ns ds100493b(12/14) g = gate c = collector e = emitter tab = collector to-247 g c e tab symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 650 v v ge(th) i c = 250 ? a, v ce = v ge 4.0 6.5 v i ces v ce = v ces , v ge = 0v 10 ? a t j = 150 ? c 750 ? a i ges v ce = 0v, v ge = ? 20v ??????????????? 100 na v ce(sat) i c = 60a, v ge = 15v, note 1 1.8 2.4 v t j = 150 ? c 2.3 v symbol test conditions maximum ratings v ces t j = 25c to 175c 650 v v cgr t j = 25c to 175c, r ge = 1m ? 650 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (chip capability) 118 a i c110 t c = 110c 60 a i cm t c = 25c, 1ms 240 a ssoa v ge = 15v, t vj = 150c, r g = 5 ? i cm = 120 a (rbsoa) clamped inductive load @v ce ? v ces t sc v ge = 15v, v ce = 360v, t j = 150c 10 s (scsoa) r g = 82 ? , non repetitive p c t c = 25c 455 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in weight 6g xpt tm 650v igbt genx4 tm extreme light punch through igbt for 20-60 khz switching features ? optimized for 20-60khz switching ? square rbsoa ? short circuit capability ? international standard package advantages ? high power density ? 175c rated ? extremely rugged ? low gate drive requirement applications ? power inverters ? ups ? motor drives ? smps ? pfc circuits ? battery chargers ? welding machines ? lamp ballasts ? high frequency power inverters preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXXH60N65C4 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 e ?? p to-247 (ixxh) outline 1 2 3 terminals: 1 - gate 2 - collector 3 - emitter dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 15 24 s c ie s 1870 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 125 pf c res 70 pf q g(on) 94 nc q ge i c = 60a, v ge = 15v, v ce = 0.5 ? v ces 15 nc q gc 40 nc t d(on) 37 ns t ri 78 ns e on 3.20 mj t d(off) 133 ns t fi 30 ns e of f 0.83 1.40 mj t d(on) 32 ns t ri 70 ns e on 3.42 mj t d(off) 110 ns t fi 47 ns e off 0.93 mj r thjc 0.33 c/w r thcs 0.21 c/w inductive load, t j = 25c i c = 60a, v ge = 15v v ce = 400v, r g = 5 ? note 2 inductive load, t j = 150c i c = 60a, v ge = 15v v ce = 400v, r g = 5 ? note 2 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2014 ixys corporation, all rights reserved IXXH60N65C4 fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 7 8 9 101112131415 v ge - volts v ce - volts i c = 120a t j = 25oc 60a 30a fig. 6. input admittance 0 10 20 30 40 50 60 70 80 90 100 4567891011 v ge - volts i c - amperes t j = - 40oc 25oc t j = 150oc fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 120 00.511.522.533.5 v ce - volts i c - amperes v ge = 15v 14v 13v 12v 10v 9v 11v 8v 7v fig. 2. extended output characteristics @ t j = 25oc 0 40 80 120 160 200 240 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 15v 10v 11v 13v 12v 8v 9v 14v 7v fig. 3. output characteristics @ t j = 150oc 0 20 40 60 80 100 120 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v ce - volts i c - amperes v ge = 15v 14v 13v 10v 11v 9v 8v 12v 7v fig. 4. dependence of v ce(sat) on junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 60a i c = 30a i c = 120a
ixys reserves the right to change limits, test conditions, and dimensions. IXXH60N65C4 fig. 7. transconductance 0 5 10 15 20 25 30 35 0 102030405060708090100 i c - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 120 140 100 200 300 400 500 600 700 v ce - volts i c - amperes t j = 150oc r g = 5 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 102030405060708090100 q g - nanocoulombs v ge - volts v ce = 325v i c = 60a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mhz c ies c oes c res fig. 11. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2014 ixys corporation, all rights reserved IXXH60N65C4 fig. 12. inductive switching energy loss vs. gate resistance 0.0 0.5 1.0 1.5 2.0 2.5 5 10152025303540455055 r g - ohms e off - millijoules 0 2 4 6 8 10 e on - millijoules e off e on - - - - t j = 150oc , v ge = 15v v ce = 400v i c = 30a i c = 60a fig. 15. inductive turn-off switching times vs. gate resistance 20 30 40 50 60 70 80 90 5 10152025303540455055 r g - ohms t f i - nanoseconds 0 100 200 300 400 500 600 700 t d(off) - nanoseconds t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 60a i c = 30a fig. 13. inductive switching energy loss vs. collector current 0.0 0.5 1.0 1.5 2.0 2.5 30 40 50 60 70 80 90 i c - amperes e off - millijoules 0 2 4 6 8 10 e on - millijoules e off e on - - - - r g = 5 ? ????? v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 e on - millijoules e off e on - - - - r g = 5 ? ???? v ge = 15v v ce = 400v i c = 30a i c = 60a fig. 16. inductive turn-off switching times vs. collector current 0 20 40 60 80 100 30 40 50 60 70 80 90 i c - amperes t f i - nanoseconds 20 60 100 140 180 220 t d(off) - nanoseconds t f i t d(off) - - - - r g = 5 ? ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 17. inductive turn-off switching times vs. junction temperature 0 20 40 60 80 100 25 50 75 100 125 150 t j - degrees centigrade t f i - nanoseconds 80 100 120 140 160 180 t d(off) - nanoseconds t f i t d(off) - - - - r g = 5 ? ? , v ge = 15v v ce = 400v i c = 30a i c = 60a
ixys reserves the right to change limits, test conditions, and dimensions. IXXH60N65C4 ixys ref: ixx_60n65c4(e6) 9-14-12 fig. 19. inductive turn-on switching times vs. collector current 0 40 80 120 160 200 30 40 50 60 70 80 90 i c - amperes t r i - nanoseconds 25 30 35 40 45 50 t d(on) - nanoseconds t r i t d(on) - - - - r g = 5 ? ? , v ge = 15v v ce = 400v t j = 25oc t j = 150oc fig. 20. inductive turn-on switching times vs. junction temperature 0 20 40 60 80 100 120 25 50 75 100 125 150 t j - degrees centigrade t r i - nanoseconds 22 26 30 34 38 42 46 t d(on) - nanoseconds t r i t d(on) - - - - r g = 5 ? ? , v ge = 15v v ce = 400v i c = 60a i c = 30a fig. 18. inductive turn-on switching times vs. gate resistance 0 40 80 120 160 200 5 10152025303540455055 r g - ohms t r i - nanoseconds 10 30 50 70 90 110 t d(on) - nanoseconds t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 30a i c = 60a
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